Bio

Hello! I’m Dongqi, a Ph.D candidate in School of Electrical and Computer Engineering at Purdue University, West Lafayette advised by Professor Peide Ye. Previously, I received a B.S in Electronic Information Science & Technology from University of Electronic Science and Technology of China in June of 2018. As an undergraduate, I worked with Professor Yan Zhang.

News: I defended my PhD thesis on Dec 16, 2022. Thanks a lot for the guidance/support from my advisor/colleagues! I am Dr. Zheng now!

Research Topic:  Novel semiconductor Devices, Memory & Brain-inspired Computing, RF devices

Skills:  Simulation (COMSOL), Coding (Python/C++/Matlab), ML frameworks (PyTorch/Tensorflow). Research and development, Teamwork, Problem-solving, Writing and Presentation

Projects

Ferroelectric Semiconductor for Non-Volatile Memory Applications

  • 3-year research project funded by Intel.
  • Advisor: Dr. Nazila Haratipour, Dr. Sou-chi Chang, Dr. Avci Uygar, Dr. Derchang Kau
  • Monthly meeting with Intel team to update the progress in the presentation
  • Pathfinding research of semiconductor material synthesis, device fabrication and circuit simulation for next-generation memory and computing

ALD semiconductor growth and device fabrication for Back-End-of-Line application  

  • Advisor: Dr. Peide Ye
  • New ALD recipe development and device investigation of InZnO for next-generation BEOL thin-film transistors (TFT) and RF applications

Si/Ge planar/Fin/Nanowire FET and FeFET

  • Funded by Samsung.
  • Collaborator: Dr. Wonil Chung (Now at Intel) Advisor: Dr. Wei-E Wang, Dr. Mark Rodder
  • Biweekly Meeting with the Samsung team to update the progress in the presentation
  • Investigation of dipole engineering in advanced 3D nanowire FET

Neural Translation: from neural signal to speech by machine learning

  • Collaborator: Dr. Mengchi Zhang (Meta) Advisor: Dr. Lu Su
  • Translation of neural signal to the speech by applying a state-of-the-art natural language processing model (LSTM/RNN)

Awards

  • The Most Outstanding Students Award (10/5000), UESTC
  • Tang Lixin Fellowship (Top 0.2%), UESTC
  • National Scholarship (Top 0.2%), UESTC

Publication

Ph.D. (2018-current)

  • Dongqi Zheng, Adam Charnas, Jackson Anderson, Hongyi Dou, Zedong Hu, Zehao Lin, Zhuocheng Zhang, Jie Zhang, Pai-Ying Liao, Mengwei Si, Haiyan Wang, Dana Weinstein and Peide. D. Ye, “First Demonstration of BEOL-Compatible Ultrathin Atomic-Layer-Deposited InZnO Transistors with GHz Operation and Record High Bias-Stress Stability, IEEE International Electron Device Meeting, 2022.
  • Dongqi Zheng, Mengwei Si, Sou-Chi Chang, Nazila Haratipour, Zhizhong Chen, Adam Charnas, Shouyuan Huang, Kang Wang, Letian Dou, Xianfan Xu, Uygar E. Avci, and Peide D. Ye, Ultrathin Two-Dimensional Van der Waals Asymmetric Ferroelectric Semiconductor Junctions, Journal of Applied Physics, 2022. (Featured Article) [pdf]
  • Dongqi Zheng, Adam Charnas, Jie Zhang, Zhuocheng Zhang, Xiao Lyu, Zehao Lin, Mengwei Si, and Peide Ye, “Atomically thin atomic-layer-deposited InZnO transistors with BEOL compatibility,” Device Research Conference, 2022
  • Dongqi Zheng, Wonil Chung, Zhizhong Chen, Mengwei Si, Calista Wilk, and Peide D. Ye, Controlling Threshold Voltage of CMOS SOI Nanowire FETs with Sub-1-nm Dipole Layers Formed by Atomic Layer Deposition, IEEE Transactions on Electron Devices, 2022 [pdf]
  • Eunseon Yu, Amogh Agrawal, Dongqi Zheng, Mengwei Si, Peide D. Ye, Sumeet K. Gupta, Kaushik Roy, “Ferroelectric FET Based Coupled-Oscillatory Network for Edge Detection”, Ferroelectric FET Based Coupled-Oscillatory Network for Edge Detection, IEEE Electron Device Letters, 2021 (Editor’s Pick) [pdf]
  • Mengwei Si, Zhuocheng Zhang, Sou-Chi Chang, Nazila Haratipour, Dongqi Zheng, Junkang Li, Uygar E. Avci and Peide D. Ye, Asymmetric Metal/α-In2Se3/Si Crossbar Ferroelectric Semiconductor Junction, ACS Nano, 2021[pdf]
  • M. Si, A. Murray, Z. Lin, J. Andler, J. Li, J. Noh, S. Alajlouni, C. Niu, X. Lyu, D. Zheng et al, BEOL Compatible Indium-Tin-Oxide Transistors: Switching of Ultra-High-Density 2D Electron Gas over 0.8×1014 /cm2 at Oxide/Oxide Interface by the Change of Ferroelectric Polarization, IEEE Transactions on Electron Devices., 2021.
  • M. Si, Y. Hu, Z. Lin, X. Sun, A. Charnas, D. Zheng, X. Lyu, H. Wang, K. Cho, and P. D. Ye, “Why In2O3 Can Make 0.7 nm Atomic Layer Thin Transistors?” Nano Letters, 2020.
  • Wonil Chung, Dongqi Zheng et al. Integration of ALD high-k dipole layers into CMOS SOI nanowire FETs for bi-directional threshold voltage engineering, IEEE Silicon Nanoelectronics Workshop, 2022
  • Dongqi Zheng et al. Concisely Bi-Directional Controlling Flat-Band and Threshold Voltage Using Single-Cycle ALD Intermixed-Dipole Engineering, Device Research Conference, 2019
  • M. Si, Y. Luo, W. Chung, H. Bae, D. Zheng, J. Li, J. Qin, G. Qiu, S. Yu, P. D. Ye: A Novel Scalable Energy-Efficient Synaptic Device: Crossbar Ferroelectric Semiconductor Junction, IEEE International Electron Device Meeting, 2019

Undergraduate (2014-2018) (#: co-first author)

  • Gyan Michael, Yaming Zhang, Jiaheng Nie, Dongqi Zheng et al, High-performance piezo-phototronic multijunction solar cells based on single-type two-dimensional materials, Nano Energy, 2022
  • Gyan Michael, Gongwei Hu, Dongqi Zheng, Yan Zhang: Piezo-phototronic solar cell based on 2D monochalcogenides materials, Journal of Physics D: Applied Physics, 2019
  • Yuru Wang#, Dongqi Zheng#, Lijie Li, Yan Zhang: Enhanced Efficiency of Flexible GaN/Perovskite Solar Cells Based on the Piezo-Phototronic Effect, ACS Applied Energy Materials, 2018
  • Ke Gu#, Dongqi Zheng#, Lijie Li, Yan Zhang: High-efficiency and stable piezo-phototronic organic perovskite solar cell, RSC Advances, 2018
  • Dongqi Zheng, Ziming Zhao, Rui Huang, Jiaheng Nie, Lijie Li, Yan Zhang High-performance piezo-phototronic solar cell based on two-dimensional materials, Nano Energy, 2018 [pdf]